← HBM Memory
Redundancy· HBM Memory · Link
CXMT, Hefei
Hefei, China31.82°N 117.23°E
computed criticality11/100
reading
≈4–9% of global DRAM in 2025 depending on the measure, figures diverge
2025Fault line
The Chinese DRAM champion is advancing fast in entry-level DDR4/DDR5 but remains blocked upstream: without EUV or the latest American equipment, competitive HBM stays out of reach in the short term. Its rise nonetheless reshapes the standard market, pushing the three incumbents to shift ever more capacity toward HBM.
Actors
CXMT / ChangXin Memory (Hefei)
Depends on 1
Photoresists, JapanSilicon · Link↗Sources
SemiAnalysis, CXMT, 2025 ↗contested