← HBM Memory
Critical node· HBM Memory · Critical anchor
Wafer bonding, EV Group
St. Florian am Inn, Austria48.21°N 13.49°E
computed criticality18/100
reading
EVG ≈26% + SUSS MicroTec ≈21% of wafer bonding
2024Fault line
Stacking and bonding wafers, a key step of HBM and of future copper-to-copper hybrid bonding, depends on an Austro-German near-duopoly: EV Group and SUSS MicroTec. When memory moves to hybrid bonding, this equipment bottleneck will harden further. Two European workshops govern the future of memory stacking.
Actors
EV Group (St. Florian am Inn)
SUSS MicroTec (Garching)
BESI (Duiven)
Feeds 1
SK Hynix, IcheonHBM Memory↗Sources